IEC 63275-2:2022

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation

IEC 63275-2:2022 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.

OEN:

IEC

Langue:

English

Code(s) de l'ICS:

31.080.30

Statut:

Publié

Date de Publication:

2022-05-10

Numéro Standard:

IEC 63275-2:2022