IEC 63284:2022

Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors

IEC 63284:2022 covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress

OEN:

IEC

Langue:

English

Code(s) de l'ICS:

31.080.30

Statut:

Publié

Date de Publication:

2022-04-20

Numéro Standard:

IEC 63284:2022