IEC 62373-1:2020

Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs). This document also defines the terms pertaining to the conventional BTI test method.

OEN:

IEC

Langue:

English

Code(s) de l'ICS:

31.080.30

Statut:

Publié

Date de Publication:

2020-07-14

Numéro Standard:

IEC 62373-1:2020