IEC 60747-9:2019

Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)

IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs). This third edition includes the following significant technical changes with respect to the previous edition: reverse-blocking IGBT and its related technical contents have been added; reverse-conducting IGBT and its related technical contents have been added; some parts of the previous edition have been amended, combined or deleted.

OEN:

IEC

Langue:

English

Code(s) de l'ICS:

31.080.01; 31.080.30

Statut:

Publié

Date de Publication:

2019-11-12

Numéro Standard:

IEC 60747-9:2019