IEC 63068-2:2019
IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.
OEN:
IEC
Langue:
English
Code(s) de l'ICS:
31.080.99
Statut:
Publié
Date de Publication:
2019-01-29
Numéro Standard:
IEC 63068-2:2019