IEC 63011-3:2018

Integrated circuits - Three dimensional integrated circuits - Part 3: Model and measurement conditions of through-silicon via

IEC 63011-3:2018 specifies a reference model of through-silicon via (TSV) electrical characteristics required for an interface design in three dimensional integrated circuit (3-D IC) to transmit and receive digital data and measurement conditions for resistance and capacitance to specify TSV characteristics in 3-D IC. Power devices, RF devices and micro-electromechanical systems (MEMS) are not in the scope of this document.

OEN:

IEC

Langue:

English

Code(s) de l'ICS:

31.200

Statut:

Publié

Date de Publication:

2018-11-27

Numéro Standard:

IEC 63011-3:2018