Semiconductor devices - Micro-electromechanical devices - Part 15: Test method of bonding strength b...
IEC 62047-15:2015 describes test method for bonding strength between poly dimethyl siloxane (PDMS) and glass. Silicone-based rubber, PDMS, is used for building of chip-based microfluidic devices fabricated using lithography and replica moulding processes. The problem of bonding strength is mainly for high pressure applications as in the case of certain peristaltic pump designs where an off chip…
Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 15: Méthode d'essai...
L'IEC 62047-15:2015 décrit la méthode d'essai de la résistance de collage entre polydiméthylsiloxane (PDMS) et verre. Le caoutchouc de silicone, PDMS, est utilisé pour la réalisation de puces microfluidiques, fabriquées en utilisant des processus de lithographie et de moulage d'empreinte. Le problème de la résistance de collage se pose principalement pour les applications à haute…
Connectors for electronic equipment - Product requirements - Part 3-122: Detail specification for ru...
IEC/PAS 61076-3-122:2015(E) covers 8-way unshielded free and fixed connectors, and is intended to specify the common dimensions, mechanical, electrical and environmental characteristics and tests for the family of IEC 61076-3 connectors. These connectors are intermateable and interoperable with other IEC 61076-3 series connectors. This PAS is a technical specification not fulfilling the…
Information technology - Automatic identification and data capture techniques - Unique identificatio...
ISO/IEC 15459-2:2015 specifies the procedural requirements to maintain identities and outlines the obligations of the Registration Authority and Issuing Agencies.
ISO/IEC 15459-2:2015 excludes those entities where ISO has designated Maintenance Agencies or Registration Authorities to provide identity and/or identifier schemes. It does not apply to:
freight containers, because their unique coding…
Power installations exceeding 1 kV a.c. and 1,5 kV d.c. - Part 2: d.c.
IEC TS 61936-2:2015(E) provides, in a convenient form, common rules for the design and the erection of electrical power installations in systems with nominal voltages above 1,5 kV d.c., so as to provide safety and proper functioning for the use intended.
Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining resi...
IEC 62047-16:2015 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 μ to 10 μ in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods.
Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 16: Méthodes d'essa...
L'IEC 62047-16:2015 définit les méthodes d'essai permettant de mesurer les contraintes résiduelles des films dont l'épaisseur se situe dans la plage de 0,01 μ à 10 μ dans des structures fabriquées de microsystèmes électromécaniques (MEMS) au moyen des méthodes de la courbure de la plaquette ou de déviation de poutre en porte-à-faux.
